unisonic technologies co., ltd 4128D preliminary npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r204-029.a middling voltage fast-switching npn power transistor ? description the utc 4128D is a middling voltage npn power transistor. it uses utc?s advanced technology to provide customers with high switching speed and high reliability, etc. the utc 4128D is suitable for commonly power amplifier circuit, electronic ballasts and energy-saving light etc. ? features * high switching speed * high reliability ? symbol to-126 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4128Dl-t60-k 4128Dg-t60-k to-126 b c e bulk note: pin assignment: b: base c: collector e: emitter 4128Dl-t60-t (1)packing type (2)package type (3)lead free (1) b: bulk (2) t60: to-126 (3) l: lead free, g: halogen free
4128D preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r204-029.a ? absolute maximum ratings (t c =25c) parameter symbol ratings unit collector-emitter voltage (v be =0) v ces 350 v collector-emitter voltage (i b =0) v ceo 200 v emitter-base voltage v ebo 7 v collector current dc i c 5 a pulse (note 2) i cp 10 a base current dc i b 2 a pulse (note 2) i bp 4 a total dissipation p c 40 w junction temperature t j 150 c storage temperature range t stg -55~+150 c notes: 1. absolute maximum ratings are stress ratings only and functional device operation is not implied. absolute maximum ratings are those values beyond wh ich the device could be permanently damaged. 2. pulse test: pulse width=5.0ms, duty cycle<10%. ? thermal characteristics parameter symbol ratings unit junction to case jc 3.125 c/w ? electrical characteristics parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =1ma, i b =0 350 v collector-emitter breakdown voltage bv ceo i c =10ma, i b =0 200 v emitter-base breakdown voltage bv ebo i e =1ma, i c =0 7 v collector cut-off current i cbo v cb =350v, i e =0 100 a collector-emitter cut-off current i ceo v ce =200v, i b =0 50 a emitter cut-off current i ebo v eb =7v, i c =0 10 a collector-emitter sa turation voltage v ce ( sat ) 1 i c =1a, i b =0.2a 0.8 v v ce ( sat ) 2 i c =3a, i b =0.6a 1.5 v base-emitter satura tion voltage v be ( sat ) i c =3a, i b =0.6a 1.6 v dc current gain h fe1 i c =0.8a,v ce =5v 8 50 h fe2 i c =3a,v ce =5v 8 transition frequency f t i c =0.5a, v ce =10v 4 mhz storage time t s v cc =24v, i c =0.5a, i b1 =-i b2 =0.1a 4 s fall time t f 0.7 s
4128D preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r204-029.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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